Biography: Dr. ZheChuan Feng, received B.S.(1968)/M.S.(1981) from Peking University, Ph. D in University of Pittsburgh, 1987, worked at Emory University(1988-92), National University of Singapore(92-94), Georgia Tech(1995,2002-03), EMCORE (95-97), Institute of Materials Research & Engineering, Singapore (98-2001), and Taiwan University (2003-15.1). Since 2015.3, he joins Guangxi University, China, as a Distinguished Professor at School of Physical Science & Technology, established and leading the Laboratory of optoelectronic materials & detection technology, focusing on materials research, growth & devices of LED/LDs/detectors for III-Nitrides, SiC, ZnO & other semiconductors/oxides/nano-structures. Feng has edited/published 11-specialized review books on compound semiconductors and microstructures, porous Si, SiC, III-Nitrides, ZnO, devices and Nano-engineering, Solid State Lighting & LEDs. He has published >600 scientific papers with 482 recorded in SCI, http://scholar.google.com/,Citations (all): 5549, h-index: 38, i10-index: 125 (till 1/15/2020). He has been visiting/Guest professors at Sichuan University, Nanjing Tech University, South China Normal University, Huazhong University of Science & Technology, Nankai University and Tianjin Normal University. He is a SPIE Fellow since 2013.

Topic: Interdisciplinary Studies on Wide Gap Semiconductors/Oxides, Nano-Structures and LEDs

Abstract: Energy-efficient and environmentally friendly solid-state light sources, in particular GaN-based light emitting diodes (LEDs), are currently revolutionizing an increasing number of applications, and bring apparent benefits to vast areas of development, such as lighting, communications, biotechnology, imaging, and medicine[1,2]. Research and developments (R&D) on III-nitrides are rapidly proceeding to DUV field. Also, other advanced semiconductors/oxides, including SiC, ZnO, Ga2O3 and related Nano-scale/nano-structured materials are causing more R&D interests and efforts. I’d like to share with you for our research accomplishments within recent 3-years, with following issues: Laboratory building up with 8-sets optical/laser spectroscopic systems. able to perform all wide spectral and temperature variable measurements of Spectroscopic Ellipsometry (SE), Raman (visible & DUV-UV), photoluminescence (PL), time-resolved PL (TRPL), PL excitation (PLE), absorption (ABS), NIR-IR PL, all with variable temperature (VT) 10-300K or 77-870K, in combined with Synchrotron X-ray absorption (XAS), Rutherford backscattering (RBS), X-ray photoelectron spectroscopy (XPS) to study in depth on modern optoelectronic and nano/quantum materials. We’ve published >50 SCI J-papers since 2015-now. Significant research outputs are described briefly, especially some Key outputs within 2018-20 for nano-structured AlN, Ga2O3, ZnO, ZnCrO4, and InGaN/GaN/ZnO. Also, multiple quantum wells (MQWs) with 1-3 nm well size and 4-8 nm barriers for LEDs, such as DUV AlGaN MQWs, InGaN/GaN MQWs & QDs, are emphasized. It’s hopeful that more discussions, especially on some unsolved/challenging research items, the combination of theory-experiments and interdisciplinary research, could lead to penetrate fundamental concepts and properties, to promote research in related fields, and to develop good collaborations in the national/world range.